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Technical Solutions (English) ​

Practical, datasheet-verified application guides for BMS protection boards, energy storage and power electronics. Core articles are available in English:

ArticleWhat It Answers
How to Select TVS for BMS Protection BoardsWhy clamping voltage — not power rating — decides whether downstream circuits survive a surge; selection flow and parameter comparison
Should BMS Cell-Sampling Lines Have a TVS?
How Do You Verify the TVS on a BMS Protection Board?Bench surge verification in four test classes and four pass criteria: why the datasheet single-point Vc must be re-measured on the board, why 10/1000us and 8/20us conventions must not be mixed, how to line the clamp curve up with the MOSFET withstand ceiling, how to judge leakage, temperature rise and parameter drift, and why the peak must be measured across the MOSFET rather than the TVS
Can You Parallel TVS Diodes?Why paralleled TVS parts do not share surge current by count (a steep breakdown slope lets the lowest-VBR die take almost everything), why mixing voltage grades in parallel is useless, the three accounts a series string runs up (clamp, voltage sharing, chain failure), and the right way to scale: move up a power tier at one voltage grade (3 kW / 5 kW / 8 kW), use a larger package, or stage the protection
AMSEMI Foldback TVS: Full Series & Cross-ReferenceComplete 5.0SMDJ**CA-N (5000 W) and SMDJ**CA-N (3000 W) parameter tables, battery-pack voltage to part-number mapping, MOS voltage-rating reduction, replacement cross-reference
Littelfuse TP5.0SMD-FL vs AMSEMI Foldback TVSPin-to-pin comparison of Littelfuse FlatSuppressX and the AMSEMI -N series across overlapping voltage grades
Surge Protection for Energy Storage / BMSIEC 61000-4-5 test levels and waveform conventions, three-stage protection design, differential vs common-mode, per-location configuration examples
Foldback TVS Cross-Reference: AMSEMI vs Littelfuse vs VishayThree names for one technology (foldback / snap-back / low-clamping), part-number cross-reference for the industry-standard 5.0SMDJ and SMDJ naming, grade-by-grade clamping comparison and package trade-offs
Which Chinese Brands Make Low-Clamping TVS?Three hard criteria for a genuinely low-clamping part (foldback behaviour and holding voltage Vh, the Vc figure at the same voltage grade, one consistent waveform convention), plus a public-source comparison of the main Chinese and imported brands and an 8-question supplier checklist
Are AMSEMI and onsemi the Same Company?Entity disambiguation: AMSEMI (Anhui Anmei Semiconductor, Chizhou, 2013) vs onsemi (US, NASDAQ: ON) — no equity or distribution relationship
What Is a TVS Diode?Transient voltage suppressor principles, unidirectional vs bidirectional (A vs CA), the five key datasheet parameters and low-clamping foldback basics
What Does a 5000 W TVS Rating Actually Mean?Peak pulse power is not continuous power: 10/1000 us vs 8/20 us waveform conventions, pulse-width derating, average power and temperature derating
Why BMS Boards Still Burn MOSFETs With a TVSFour-check root-cause method: waveform convention, three-stage voltage window, holding voltage Vh, layout — and why the middle gate is skipped
TVS Fitted, MOSFETs Still Blow: The 23S / 24S Voltage BudgetGrade-by-grade accounting of 5.0SMDJ85CA + 100 V MOS and 5.0SMDJ90CA + 120 V MOS: three gates, five failure conditions, three escape routes, and the foldback -N saving of one MOS voltage grade
Suppressing Relay Coil Turn-Off Spikes: TVS, Diode or RCCoil-side clamp selection: energy estimate, four clamp options, clamping voltage window against driver withstand, TVS energy and average power check
How to Select Charge and Discharge MOSFETs for a BMS Protection BoardFour-step selection: voltage rating from cell count, RDS(on) and parallel count from current, package from thermal budget, SOA check — plus the 48 V platform table and an overheating / blown-device debug guide
What Is MOSFET Avalanche Breakdown?Avalanche versus overvoltage breakdown, how to read EAS / EAR / SOA, the E = 1/2 L I squared energy budget, four ruggedness gates and six circuit measures that cut the stress
Why Do RS485 and CAN Ports Keep Failing?Signal-port TVS in four parameters (VRWM, VC, Cj, bidirectional vs unidirectional), junction capacitance versus baud rate, layout rules and port failure debugging
How to Design a BMS Precharge CircuitPrecharge resistor value and pulse energy, branch device selection, the 90 to 95 percent bus criterion with timeout protection, and failure debugging
How to Design a MOSFET Gate Drive CircuitDrive voltage platform, peak current and drive power from Qg, asymmetric gate resistors, dv/dt Miller false turn-on suppression and gate loop layout

More in Chinese: the full solution library (26+ articles on IGBT/MOSFET selection, GD32 MCU, digital isolators, cell balancing, pre-charge circuits and more) is available on the Chinese side of this site — see 全部方案(中文).

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